Stable Al ₂ O ₃ Encapsulation of MoS ₂ ‐FETs Enabled by CVD Grown h‐BN

Molybdenum disulfide (MoS2) has great potential as a two-dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents charge transfer from neighboring dielectrics can lead device variability instability. Aluminum oxide (Al2O3) is widely used an encapsulation layer in (opto)-electronics, it leads detrimental n-doping MoS2. Here, this work reports scalable approach MoS2 field-effect transistors (FETs) where hexagonal boron nitride (h-BN) monolayers are employed barrier in-between each of the Al2O3 interfaces. These devices exhibit significant reduction transfer, when compared structures without h-BN. This benefit h-BN gate stack confirmed by ab initio density functional theory calculations. In addition, with layers show very low hysteresis even under ambient operating conditions.